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| PZT772 PNP Silicon Epitaxial Transistor P b Lead(Pb)-Free BASE 1 3 EMITTER COLLECTOR 2, 4 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR 4 1 2 3 SOT-223 ABSOLUTE MAXIMUM RATINGS (TA=25 C) Rating Collector to Base Voltage Collector to Emitter Voltage Collector to Base Voltage Collector Current Total Device Disspation TA=25C Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PD Tj Tstg Value -40 -30 -5.0 -3.0 1.5 +150 -55 to +150 Unit V V V A W C C Device Marking PZT772 = 772 ELECTRICAL CHARACTERISTICS Characteristics Collector-Base Breakdown Voltage IC=-100A, IE=0 Collector-Emitter Breakdown Voltage IC=-10mA, IB =0 Emitter-Base Breakdown Voltage IE=-10A, IC=0 Collector Cut-Off Current VCB=-30V, IE=0 Emitter-Cut-Off Current VEB=-3V, IC=0 Symbol BVCBO BVCEO BVEBO ICBO IEBO Min -40 -30 Max Max Unit V V -5.0 - - -1.0 V A - - -1.0 A WEITRON http://www.weitron.com.tw 1/4 07-Feb-07 PZT772 ELECTRICAL CHARACTERISTICS (TA=25C Unless otherwise noted) Characteristic Symbol Min Typ Max Unit ON CHARACTERISTICS(1) DC Current Gain VCE=-2V, IC=-20mA VCE=-2V, IC=-1A Collector-Emitter Saturation Voltage IC=-2A, I B=-0.2A Base-Emitter On Voltage IC=-2A, I B=-0.2A Transition Frequency VCE=-20V, IC=-20mA, f=100MHz Output Capacitance VCB=-10V, IE=0, f=1MHz Note 1.Pulse Test : Pulse width < 380s, Duty cycle 2%. hFE1 hFE2 VCE(sat) VBE(sat) fT Cob 30 100 160 -0.3 -1.0 80 55 500 -0.5 -2.0 V V MHz pF CLASSIFICATION of hFE2 Rank Range Q 100-200 P 160-320 E 250-500 WEITRON http://www.weitron.com.tw 2/4 07-Feb-07 PZT772 Typical Characteristics WEITRON http://www.weitron.com.tw 3/4 07-Feb-07 PZT772 SOT-223 Outline Dimensions unit:mm A F DIM MILLIMETERS MIN MAX 4 S 1 2 3 B D L G C H M K J A B C D F G H J K L M S 6.30 3.30 1.50 0.60 2.90 2.20 0.020 0.24 1.50 0.85 0 6.70 6.70 3.70 1.75 0.89 3.20 2.40 0.100 0.35 2.00 1.05 10 7.30 WEITRON http://www.weitron.com.tw 4/4 07-Feb-07 |
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